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Volumn 77, Issue 4, 2000, Pages 534-536

Stacking fault energies in Si doped GaN: A first principles study

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EID: 0001204761 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.127035 Document Type: Article

Times cited : (15)

References (11)

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