Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 358-362

  Lee, Sung Nam ^a   Paek, H S ^a   Son, J K ^a   Sakong, T ^a   Nam, O H ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

A1. Atomic force microscopy; A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ACTIVATION ENERGY; BUFFER LAYERS; CRYSTAL STRUCTURE; DEFECTS; DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SURFACE ROUGHNESS;

GROWTH CONDITION; OPTICAL EFFICIENCY; ROOT MEAN SQUARE; TRIANGULAR PITS;

GALLIUM NITRIDE;

EID: 34548412643     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.027     Document Type: Article

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