Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

Journal of Alloys and Compounds

Volumn 554, Issue , 2013, Pages 258-263

  Polyakov, A Y ^a   Jeon, Dae Woo ^b   Govorkov, A V ^a   Smirnov, N B ^a   Sokolov, V N ^c   Kozhukhova, E A ^a   Yakimov, E B ^d   Lee, In Hwan ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Chonbuk National University   (South Korea)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Chemical treatment; Maskless epitaxial lateral overgrowth; Nanopillar

Indexed keywords

CHEMICAL TREATMENTS; DAMAGED REGION; DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; EPITAXIAL OVERGROWTH; EXPERIMENTAL CONDITIONS; INTERNAL QUANTUM EFFICIENCY; KOH ETCHING; KOH SOLUTION; LIGHT-EXTRACTION EFFICIENCY; LUMINESCENCE INTENSITY; LUMINESCENT INTENSITY; MASK LESS; NANOPILLAR; NANOPILLAR STRUCTURES; NANOPILLARS; NI FILMS; NI NANOPARTICLES; RADIATION DEFECTS; SCHOTTKY DIODES; THREADING DISLOCATION DENSITIES;

DEFECTS; DRY ETCHING; EPITAXIAL GROWTH; GALLIUM NITRIDE; LUMINESCENCE; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES;

NANOSTRUCTURES;

EID: 84871573416     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.194     Document Type: Article

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