Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

Nanotechnology

Volumn 25, Issue 16, 2014, Pages

  Hsu, Chung Wei ^a   Wang, Yu Fen ^a   Wan, Chia Chen ^a   Wang, I Ting ^a   Chou, Chun Tse ^a   Lai, Wei Li ^a   Lee, Yao Jen ^b   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

current conduction mechanism; resistiveswitching random access memory; self rectification; storageclass memory; threedimensional memory

Indexed keywords

MODULATION; MONOLITHIC INTEGRATED CIRCUITS; THREE DIMENSIONAL; TITANIUM DIOXIDE;

CURRENT CONDUCTION MECHANISMS; HIGH-DENSITY INTEGRATION; OPERATING CURRENTS; OXYGEN ION MIGRATIONS; PERIPHERAL CIRCUITS; RANDOM ACCESS MEMORY; SELF RECTIFICATION; STORAGE-CLASS MEMORY;

RANDOM ACCESS STORAGE;

EID: 84897470308     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/16/165202     Document Type: Article

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