Bipolar NTiO2HfO2/Ni RRAM with multilevel states and self-rectifying characteristics

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 885-887

  Hsu, Chung Wei ^a   Hou, Tuo Hung ^a   Chen, Mei Chin ^a   Wang, I Ting ^a   Lo, Chun Li ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

3 D memory; crossbar array; resistive switching memory (RRAM); self rectification

Indexed keywords

CROSSBAR ARRAYS; CURRENT RECTIFICATIONS; OXYGEN VACANCY MIGRATION; RECTIFICATION RATIO; RESISTIVE SWITCHING MEMORY; ROOM-TEMPERATURE PROCESS; SELF-RECTIFICATION; STORAGE-CLASS MEMORY;

ELECTRIC RECTIFIERS; HAFNIUM OXIDES; NICKEL; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

RANDOM ACCESS STORAGE;

EID: 84880061423     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2264823     Document Type: Article

References (11)

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