Plasma-enhanced atomic layer deposition of III-nitride thin films

ECS Transactions

Volumn 58, Issue 10, 2013, Pages 289-297

  Ozgit Akgun, C ^a   Donmez, I ^a   Biyikli, N ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITROGEN PLASMA; OXYGEN;

DEPOSITED FILMS; GAN THIN FILMS; LOW IMPURITY CONCENTRATIONS; NITROGEN-CONTAINING PLASMAS; OXYGEN CONCENTRATIONS; OXYGEN CONTAMINATION; OXYGEN INCORPORATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 84896896748     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05810.0289ecst     Document Type: Conference Paper

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