Studies of the plasma related oxygen contamination of gallium nitride grown by remote plasma enhanced chemical vapour deposition

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 156-160

  Butcher, K S A ^a   Afifuddin, ^a   Chen, P P T ^a   Tansley, T L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ALUMINUM OXIDE; AMMONIA; CONTAMINATION; FILM GROWTH; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; OXYGEN SUPPLY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; TUBES (COMPONENTS); WIDE BAND GAP SEMICONDUCTORS;

AMMONIA PLASMA; FUSED ALUMINAS; GALLIUM NITRIDE FILMS; MATERIAL CHARACTERISATION; OXYGEN CONTAMINATION; PROTECTIVE LAYERS; REMOTE PLASMAS; TRANSMISSION MEASUREMENTS;

NITROGEN PLASMA;

EID: 33645993799     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390012     Document Type: Conference Paper

References (6)

1. K. S. A. Butcher, Afifuddin, P.-T. Chen, E. M. Goldys, and T. L. Tansley, phys. stat. sol. (a) 188, 667 (2001).
2. K. S. A. Butcher and T. L. Tansley, J. Appl. Phys. 90, 6217 (2001).
3. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
4. N. M. Johnson, J. Walker, C. M. Doland, K. Winer, and R. A. Street, Appl. Phys. Lett. 54, 1872 (1989).
5. P.-T. Chen, K. S. A. Butcher, E. M. Goldys, and T. L. Tansley, Proc. 7th Internat. Conf. Struct. of Surf., submitted to Surf. Rev. Lett.
6. O. Ambacher, J. Phys. D 31, 2653 (1998).