Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 2, 2012, Pages 266-271

  Alevli, Mustafa ^a   Ozgit, Cagla ^a   Donmez, Inci ^a   Biyikli, Necmi ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

ALD; AlN; decomposition limited growth; self limiting growth

Indexed keywords

ALD; ALN; ALN FILMS; CHEMICAL COMPOSITIONS; CONSTANT GROWTH RATES; CRYSTALLINE ALUMINUM; CRYSTALLINITIES; HIGHER TEMPERATURES; LOW GROWTH TEMPERATURE; MASS DENSITIES; METALLIC ALUMINUM; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SPECTRAL REFRACTIVE INDICES; TEMPERATURE RANGE; TEMPERATURE WINDOW;

ALUMINUM; ALUMINUM COATINGS; ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; GROWTH TEMPERATURE; NITRIDES; PLASMA DEPOSITION; REFRACTIVE INDEX; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM GROWTH;

EID: 84856238198     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127430     Document Type: Article

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