Atomic layer deposition of GaN using Ga Cl 3 and N H 3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 923-928

  Kim, Oh Hyun ^a   Kim, Dojun ^a   Anderson, Tim ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALD GROWTH; EXPOSURE-TIME; GAN FILM; GASPHASE; GROWTH CONDITIONS; LATERAL GROWTH; SI (100) SUBSTRATE; TEMPERATURE WINDOW;

ADSORPTION; ATOMIC LAYER DEPOSITION; ATOMS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; WINDOWS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 67650302600     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3106619     Document Type: Article

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