Layer-by-layer growth of GaN on GaAs substrates by alternate supply of GaCl3 and NH3

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 B, 1996, Pages

  Tsuchiya, H ^a   Akamatsu, M ^a   Ishida, M ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BOUNDARY LAYERS; CHEMICAL REACTIONS; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MONITORING; OPTOELECTRONIC DEVICES; SURFACE PHENOMENA;

IN SITU OBSERVATION; LAYER-BY-LAYER GROWTH; SURFACE PHOTO-ABSORPTION;

SEMICONDUCTOR MATERIALS;

EID: 0030168805     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l748     Document Type: Article

References (15)