Effect of boron concentration on recombination at the p -Si-Al 2O3 interface

Journal of Applied Physics

Volumn 115, Issue 9, 2014, Pages

  Black, Lachlan E ^a   Allen, Thomas ^a   McIntosh, Keith R ^b   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b PV Lighthouse   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; BORON; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; PASSIVATION;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BORON CONCENTRATIONS; CHEMICAL PASSIVATION; CONDUCTANCE MEASUREMENT; DOPANT CONCENTRATIONS; INTERFACE STATE DENSITY; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

INTERFACE STATES;

EID: 84896753743     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4867643     Document Type: Article

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