The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Jin, H ^a   Jellett, W E ^a   Chun, Z ^a   Weber, K J ^a   Blakers, A W ^a   Smith, P J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; PARAMAGNETIC RESONANCE; SHEET RESISTANCE; SILICON COMPOUNDS;

BORON DIFFUSIONS; SILICON SILICON OXIDE INTERFACE;

BORON;

EID: 41349090111     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903698     Document Type: Article

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