Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Yan, Di ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN STATISTICS; DOPANT CONCENTRATIONS; EMPIRICAL EXPRESSION; ENERGY BANDGAPS; FERMI-DIRAC STATISTICS; PHOSPHORUS DIFFUSION; RECOMBINATION CURRENTS; SILICON DEVICES;

SEMICONDUCTOR DOPING;

ENERGY GAP;

EID: 84882410091     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816694     Document Type: Article

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