Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

Journal of Applied Physics

Volumn 114, Issue 9, 2013, Pages

  Liao, Baochen ^a,b   Stangl, Rolf ^a   Ma, Fajun ^a   Hameiri, Ziv ^a   Mueller, Thomas ^a   Chi, Dongzhi ^b   Aberle, Armin G ^a   Bhatia, Charanjit S ^a   Hoex, Bram ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; AUGER RECOMBINATION; BORON-DOPED SILICON; DEPOSITION TEMPERATURES; EMITTER SATURATION CURRENT DENSITY; EMITTER SATURATION CURRENTS; HIGH-TEMPERATURE FIRING; SURFACE PASSIVATION;

ALUMINUM; ATOMIC LAYER DEPOSITION; COMPUTER SIMULATION; DEPOSITION; PASSIVATION; SILICON;

SILICON WAFERS;

EID: 84884943448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819970     Document Type: Article

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