Surface recombination velocity of highly doped n-type silicon

Journal of Applied Physics

Volumn 80, Issue 6, 1996, Pages 3370-3375

  Cuevas, Andrés ^a   Basore, Paul A ^b,d   Giroult Matlakowski, Gaëlle ^a   Dubois, Christiane ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CNRS   (France)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001035051     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363250     Document Type: Article

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