Electrical properties of sulfur-implanted cubic boron nitride thin films

Chinese Science Bulletin

Volumn 59, Issue 12, 2014, Pages 1280-1284

  Zhang, Xingwang ^a   Yin, Zhigang ^a   Si, Faitong ^a   Gao, Hongli ^a   Liu, Xin ^a   Zhang, Xiulan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Cubic boron nitride; Doping; Electrical properties; Ion implantation

Indexed keywords

EID: 84896548500     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-014-0136-6     Document Type: Article

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