The electrical properties of sulfur-implanted cubic boron nitride thin films

Chinese Physics B

Volumn 21, Issue 4, 2012, Pages

  Deng, Jin Xiang ^a   Qin, Yang ^a   Kong, Le ^a   Yang, Xue Liang ^a   Li, Ting ^a   Zhao, Wei Ping ^a   Yang, Ping ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

activation energy; cubic boron nitride; ion implantation; surface resistivity

Indexed keywords

BORON NITRIDE THIN FILMS; CUBIC BORON NITRIDE (CBN); IMPLANTATION DOSE; IMPLANTATION ENERGIES; P-TYPE SI; RADIO-FREQUENCY SPUTTERING; SURFACE RESISTIVITY;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; ION IMPLANTATION; SILICON WAFERS; SULFUR; THIN FILMS;

CUBIC BORON NITRIDE;

EID: 84859601931     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/4/047202     Document Type: Article

References (7)

1. Wentorf R H 1962 J. Chem. Phys 36 1990
2. Chen G H, Wang Y Y, Zhang F Q and Wu J H 1980 Wuli (Phys.) 9 502 (in Chinese)
3. He Y L, Chen G H and Zhang F Q 1989 Physics of Amorphous Semiconductor (Beijing: Higher Education Press) p 221 (in Chinese)
4. Huang Z, Wu L L, Li B, Hao X, He J X, Feng L H, Li W, Zhang J Q and Cai Y P 2010 Chin. Phys B 19 127204
5. Yang Y, Li S T, Ding C and Cheng P F 2011 Chin. Phys B 20 025201
6. Mishima O, Tanaka J, Yamaoka S and Fukunaga O 1987 Science 238 181
7. He B, Zhang W J, Zou Y S, Chong Y M, Ye Q, Ji A L, Yang Y, Bello I, Lee S T and Chen G H 2008 Appl. Phys. Lett 92 102108