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Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

(6) Ying, J a Zhang, X W a Yin, Z G a Tan, H R a Zhang, S G a Fan, Y M a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TAIL; BN FILMS; BORON NITRIDE THIN FILMS; CONDUCTION MECHANISM; COSPUTTERING; CUBIC BORON NITRIDE (CBN); DOPING EFFECTS; ELECTRICAL CONDUCTIVITY; ELECTRICAL TRANSPORT PROPERTIES; IN-SITU; RANGE HOPPING; SI CONCENTRATION; STATE CONDUCTION; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

ACTIVATION ENERGY; BORON; CONCENTRATION (PROCESS); CUBIC BORON NITRIDE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IMPURITIES; ION BEAM ASSISTED DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551667382 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544065 Document Type: Article

Times cited : (51)

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