Electronic structure and impurity states of S-doped cBN: A first-principle study

Journal of Alloys and Compounds

Volumn 531, Issue , 2012, Pages 82-85

  Li, Y B ^a   Jiang, H X ^a   Yuan, G Z ^b   Chen, A L ^b   Wang, X ^a   Dai, T G ^a   Yang, H S ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Bandgap; Cubic boron nitride; Doping; First principle study; Sulfur

Indexed keywords

B ATOMS; CONDUCTION BAND EDGE; DEEP DONOR; DOPANT CONCENTRATIONS; FIRST-PRINCIPLE APPROACH; FIRST-PRINCIPLE STUDY; IMPURITY STATE; S-DOPED; SHALLOW DONORS;

ATOMS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY GAP; SULFUR;

CUBIC BORON NITRIDE;

EID: 84860382040     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.04.002     Document Type: Article

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