Deposition and electrical characteristics of S-doped boron nitride thin films

Vacuum

Volumn 86, Issue 1, 2011, Pages 48-50

  Deng, Jinxiang ^a   Guo, Qinxiu ^a   Li, Ting ^a   Qin, Yang ^a   Yang, Xueliang ^a   Yang, Ping ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

C V characteristics; cBN films; cBN Si n p heterojunctions; I V characteristics

Indexed keywords

ANDERSONS; BORON NITRIDE THIN FILMS; BUILT-IN POTENTIAL; C-V CHARACTERISTIC; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CBN FILMS; CBN/SI N-P HETEROJUNCTIONS; CURRENT VOLTAGE; DOPANT CONCENTRATIONS; ELECTRICAL CHARACTERISTIC; FITTING RESULTS; IV CHARACTERISTICS; P-TYPE SI; REACTIVE SPUTTER; S-DOPED; WORKING GAS;

BORON; CUBIC BORON NITRIDE; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SULFUR;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79960175154     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.04.011     Document Type: Article

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