Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se2 thin films

Journal of Applied Physics

Volumn 115, Issue 10, 2014, Pages

  Dietrich, J ^a,b   Abou Ras, D ^b   Schmidt, S S ^b   Rissom, T ^b   Unold, T ^b   Cojocaru Miredin O ^b   Niermann, T ^c   Lehmann, M ^c   Koch, C T ^d   Boit, C ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRIC PROPERTIES; ELECTRON HOLOGRAPHY; ELECTROSTATICS; GALLIUM; SOLAR CELLS; THIN FILMS;

COMPOSITIONAL PROPERTIES; ELECTRICAL POTENTIAL DISTRIBUTION; ELECTROSTATIC POTENTIAL DISTRIBUTION; ELECTROSTATIC POTENTIAL WELLS; ELECTROSTATIC POTENTIALS; IN-LINE ELECTRON HOLOGRAPHY; PHOTOVOLTAIC PERFORMANCE; POWER CONVERSION EFFICIENCIES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84896325320     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4867398     Document Type: Article

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