How grain boundaries in Cu(In,Ga)Se 2 thin films are charged: Revisit

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Jiang, C S ^a   Contreras, M A ^a   Repins, I ^a   Moutinho, H R ^a   Yan, Y ^b   Romero, M J ^a   Mansfield, L M ^a   Noufi, R ^a   Al Jassim, M M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METHODS; CU(IN , GA)SE; DEVICE PERFORMANCE; HIGH-QUALITY FILMS; LOW QUALITIES; MINIMAL SURFACES; POSITIVELY CHARGED; POTENTIAL MEASUREMENTS; SCANNING CAPACITANCE MICROSCOPY; SCANNING KELVIN PROBE FORCE MICROSCOPY; WIDE-BANDGAP FILMS;

GALLIUM; GRAIN BOUNDARIES; THIN FILMS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84864226385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737406     Document Type: Article

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