Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capacitance profiling

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1000-1010

  Heath, Jennifer T ^a   Cohen, J David ^a   Shafarman, William N ^b  

^a UNIVERSITY OF OREGON   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; COPPER COMPOUNDS; INFRARED RADIATION; INTERFACES (MATERIALS); SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; VOLTAGE MEASUREMENT;

DRIVE LEVEL CAPACITANCE PROFILING TECHNIQUE; METASTABLE EFFECTS;

THIN FILMS;

EID: 1142269587     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633982     Document Type: Article

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