Compositional gradients in Cu(In,Ga)Se 2 thin films for solar cells and their effects on structural defects

IEEE Journal of Photovoltaics

Volumn 2, Issue 3, 2012, Pages 364-370

  Dietrich, Jens ^a   Abou Ras, Daniel ^b   Rissom, Thorsten ^b   Unold, Thomas ^b   Schock, Hans Werner ^b   Boit, Christian ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Chalcopyrite type; Cu(In,Ga)Se 2 (CIGSe); dislocation; Ga gradient; microstructure

Indexed keywords

ABSORBER LAYERS; CHALCOPYRITE-TYPE; COMPOSITIONAL GRADIENTS; CU(IN , GA)SE; ELEMENTAL DISTRIBUTION; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; LARGE-GRAIN; LINEAR DEFECT; MICROTWINS; MULTISTAGE PROCESS; PLANAR DEFECT; SAMPLE POSITION; STRUCTURAL DEFECT; STRUCTURAL PARAMETER; TEM IMAGES; THIN-FILM SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY TEM;

COPPER; COPPER COMPOUNDS; DEFECTS; DISLOCATIONS (CRYSTALS); ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; MICROSTRUCTURE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 84865188394     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2190584     Document Type: Article

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