Microstructural properties of Cu(In,Ga)Se2 thin films used in high-efficiency devices

Thin Solid Films

Volumn 387, Issue 1-2, 2001, Pages 1-5

  Hasoon, F S ^a   Yan, Y ^a   Althani, H ^a   Jones, K M ^a   Moutinho, H R ^a   Alleman, J ^a   Al Jassim, M M ^a   Noufi, R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Cu(In,Ga)Se2; Device performance; Microstructural properties

Indexed keywords

COPPER COMPOUNDS; CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ENERGY GAP; INTERFACES (MATERIALS); OPTICAL CORRELATION; PHOTOVOLTAIC CELLS; POLYCRYSTALLINE MATERIALS; SHORT CIRCUIT CURRENTS; THIN FILMS; TWINNING;

THIN FILM POLYCRYSTALLINE PHOTOVOLTAIC DEVICES;

SOLAR CELLS;

EID: 0035967539     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01724-7     Document Type: Article

References (6)