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Volumn 519, Issue 21, 2011, Pages 7341-7346

Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2

(17) Sadewasser, S a Abou Ras, D a Azulay, D b Baier, R a Balberg, I b Cahen, D c Cohen, S c Gartsman, K c Ganesan, K c Kavalakkatt, J a Li, W c Millo, O b Rissom, Th a Rosenwaks, Y d Schock, H W a Schwarzman, A d Unold, T a

a HAHN MEITNER INSTITUT (Germany)

b HEBREW UNIVERSITY OF JERUSALEM (Israel)

c WEIZMANN INSTITUTE OF SCIENCE (Israel)

d TEL AVIV UNIVERSITY (Israel)

Author keywords

Chalcopyrite; Grain boundary; Scanning electron microscopy; Scanning probe microscopy

Indexed keywords

BANDBENDING; CHALCOPYRITE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CU(IN , GA)SE; DEPOSITION PROCESS; DEVICE PROPERTIES; ELECTRON BACK SCATTER DIFFRACTION; ELECTRON-BEAM-INDUCED CURRENT; GRAIN INTERIORS; KELVIN PROBE FORCE MICROSCOPY; LOW BIAS; MICROSCOPIC TECHNIQUES; MICROSTRUCTURAL PROPERTIES; NANO-METER-SCALE; POLYCRYSTALLINE; RESEARCH EFFORTS; SCANNING CAPACITANCE MICROSCOPY; SCANNING ELECTRONS; SCANNING PROBES; VARIABLE TEMPERATURE;

ATOMIC FORCE MICROSCOPY; COPPER; COPPER COMPOUNDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; PROBES; SCANNING ELECTRON MICROSCOPY;

GALLIUM;

EID: 80052158113 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.227 Document Type: Conference Paper

Times cited : (49)

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