Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

Applied Physics Letters

Volumn 87, Issue 21, 2005, Pages 1-3

  Persson, Clas ^a   Zunger, Alex ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOPYRITES; CONDUCTION-BAND OFFSET; GRAIN INTERIOR (GI); VALENCE-BAND OFFSET;

ELECTRONS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; POSITIVE IONS; SOLAR CELLS;

PYRITES;

EID: 27844475333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132537     Document Type: Article

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