Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Physical Review X

Volumn 3, Issue 4, 2014, Pages

  Wu, Shuxiang ^a,b,c   Luo, Xin ^c   Turner, Stuart ^d   Peng, Haiyang ^a   Lin, Weinan ^a   Ding, Junfeng ^e   David, Adrian ^a   Wang, Biao ^c   Van Tendeloo, Gustaaf ^d   Wang, Junling ^b   Wu, Tom ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SUN YAT SEN UNIVERSITY   (China)

^d UNIVERSITY OF ANTWERP   (Belgium)

^e KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CHARGED OXYGEN VACANCIES; CONDUCTING LAYERS; HIGH-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; OHMIC CHARACTERISTICS; RESISTIVE SWITCHING; REVERSIBLE TRANSITIONS;

DEFECTS; INTERFACE STATES; LANTHANUM ALLOYS; STRONTIUM TITANATES; SWITCHING SYSTEMS;

HETEROJUNCTIONS;

EID: 84893681626     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.3.041027     Document Type: Article

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