Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 16, 2011, Pages

  Liu, Z Q ^a   Leusink, D P ^a   Lu W M ^a   Wang, X ^a   Yang, X P ^b   Gopinadhan, K ^a   Lin, Y T ^a   Annadi, A ^a   Zhao, Y L ^a   Barman, A Roy ^a   Dhar, S ^a   Feng, Y P ^a   Su, H B ^b   Xiong, G ^a   Venkatesan, T ^a   Ariando, ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80455124099     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.165106     Document Type: Article

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