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Volumn 97, Issue 12, 2010, Pages

Resistance switching at the interface of LaAlO3 / SrTiO 3

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CONDUCTING ATOMIC FORCE MICROSCOPY; EXTERNAL ELECTRIC FIELD; INTRINSIC FEATURES; ION TRANSFER; NANO-METER SCALE; RESISTANCE SWITCHING; SINGLE CRYSTAL SUBSTRATES; SRTIO; SWITCHING BEHAVIORS; UNIT CELLS; VACUUM ENVIRONMENT;

EID: 77957116411     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3490646     Document Type: Article
Times cited : (44)

References (16)
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  • 3
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    • Chambers, S.A.1
  • 6
    • 33749366224 scopus 로고    scopus 로고
    • Tunable quasi-two-dimensional electron gases in oxide heterostructures
    • DOI 10.1126/science.1131091
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    • (2006) Science , vol.313 , Issue.5795 , pp. 1942-1945
    • Thiel, S.1    Hammerl, G.2    Schmehl, A.3    Schneider, C.W.4    Mannhart, J.5
  • 8
    • 60749115377 scopus 로고    scopus 로고
    • SCIEAS 0036-8075,. 10.1126/science.1168294
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  • 11
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • DOI 10.1038/nmat2023, PII NMAT2023
    • R. Waser and M. Aono, Nature Mater. NMAACR 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
    • Waser, R.1    Aono, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.