Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3 - SrTiO3 interfaces

Applied Physics Letters

Volumn 96, Issue 18, 2010, Pages

  Jany, R ^a   Breitschaft, M ^a   Hammerl, G ^a   Horsche, A ^a   Richter, C ^a   Paetel, S ^a   Mannhart, J ^a   Stucki, N ^b   Reyren, N ^b   Gariglio, S ^b   Zubko, P ^b   Caviglia, A D ^b   Triscone, J M ^b  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BREAKDOWN VOLTAGE; CARRIER DENSITY; ROOM TEMPERATURE; SRTIO;

DIODES; ELECTRIC BREAKDOWN; LANTHANUM ALLOYS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM ALLOYS;

METAL INSULATOR TRANSITION;

EID: 77952867717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428433     Document Type: Article

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