Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Scientific Reports

Volumn 2, Issue , 2012, Pages

  Peng, Hai Yang ^a   Li, Yong Feng ^a   Lin, Wei Nan ^a   Wang, Yu Zhan ^b   Gao, Xing Yu ^b,c   Wu, Tom ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; INDIUM OXIDE; NICKEL; NICKEL MONOXIDE; OXYGEN;

ALGORITHM; ARTICLE; CHEMISTRY; ELECTRODE; ELECTRON; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; PHYSICAL CHEMISTRY; X RAY ABSORPTION SPECTROSCOPY;

ALGORITHMS; ELECTRODES; ELECTRONICS; ELECTRONS; INDIUM; NICKEL; OXYGEN; PHYSICOCHEMICAL PHENOMENA; X-RAY ABSORPTION SPECTROSCOPY;

EID: 84862003764     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00442     Document Type: Article

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