Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 1, 2014, Pages 27-33

  Wagner, Guenter ^a   Baldini, Michele ^a,b   Gogova, Daniela ^a   Schmidbauer, Martin ^a   Schewski, Robert ^a   Albrecht, Martin ^a   Galazka, Zbigniew ^a   Klimm, Detlef ^a   Fornari, Roberto ^a,c  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b IMEM CNR   (Italy)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

Ga2O3; metal organic vapor phase epitaxy; structure; thin films; transparent semiconducting oxides

Indexed keywords

BRAGG REFLECTION; GROWTH PARAMETERS; HOMOEPITAXIAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; SUITABLE CONDITIONS; THERMODYNAMICAL; TRANSPARENT SEMICONDUCTING OXIDE; TRIMETHYL GALLIUM;

EPITAXIAL GROWTH; EPITAXIAL LAYERS; HEAT TREATMENT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER OPTICS; METALLORGANIC VAPOR PHASE EPITAXY; OXIDANTS; OXYGEN; STRUCTURE (COMPOSITION); THIN FILMS; VAPORS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 84892925212     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201330092     Document Type: Article

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