Czochralski growth and characterization of β-Ga2O 3 single crystals

Crystal Research and Technology

Volumn 45, Issue 12, 2010, Pages 1229-1236

  Galazka, Z ^a   Uecker, R ^a   Irmscher, K ^a   Albrecht, M ^a   Klimm, D ^a   Pietsch, M ^a   Brutzam M ^a   Bertram, R ^a   Ganschow, S ^a   Fornari, R ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Ga2O3 crystal; Czochralski method; growth atmosphere; optical and electrical properties

Indexed keywords

ATOMIC RESOLUTION; CZOCHRALSKI GROWTH; CZOCHRALSKI METHODS; DEFECT LEVELS; DYNAMIC GROWTH; ELECTRICAL PROPERTY; ELECTRON PARAMAGNETIC RESONANCE; FREE CARRIER CONCENTRATION; GROWTH ATMOSPHERE; GROWTH CONDITIONS; HIGH TEMPERATURE; INTERSTITIALS; IONISATION; IRIDIUM CRUCIBLE; MASS CHANGE; NEUTRAL ATMOSPHERE; NO DECOMPOSITION; OPTICAL AND ELECTRICAL PROPERTIES; OVERPRESSURE; OXYGEN CONCENTRATIONS; PRESSURE AND TEMPERATURE; RESIDUAL IMPURITIES; ROOM TEMPERATURE; SHALLOW DONORS; THERMODYNAMIC CALCULATIONS; VOLATILE SPECIES;

CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DIFFERENTIAL THERMAL ANALYSIS; ELECTRIC PROPERTIES; ELECTRON SPIN RESONANCE SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRIDIUM; OXYGEN; PARAMAGNETIC RESONANCE; PROTECTIVE ATMOSPHERES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

ATMOSPHERIC TEMPERATURE;

EID: 78649288023     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201000341     Document Type: Conference Paper

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