Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 5, 2007, Pages 1706-1710

  Holland, M ^a   Stanley, C R ^a   Reid, W ^a   Hill, R J W ^a   Moran, D A J ^a   Thayne, I ^a   Paterson, G W ^a   Long, A R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; GROWTH RATE; MOLECULAR BEAM EPITAXY; MOLECULAR OXYGEN; MOSFET DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

ATOMIC OXYGEN; INTERFACE QUALITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34648818929     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2778690     Document Type: Article

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