Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

Materials Science and Engineering: B

Volumn 110, Issue 1, 2004, Pages 34-37

  Kim, Hyoun Woo ^a   Kim, Nam Ho ^a  

^a Inha University   (South Korea)

Author keywords

Ga2O3; MOCVD; Temperature; Thin film

Indexed keywords

CRYSTALLIZATION; DEPOSITION; FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SILICON; SOL-GELS; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

DIFFRACTION PEAKS; GA2O3; GROWTH TEMPERATURE;

GALLIUM COMPOUNDS;

EID: 2442583104     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.01.012     Document Type: Article

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