Thermal annealing effect on material characterizations of β-Ga 2O3 epilayer grown by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Huang, Chiung Yi ^a   Horng, Ray Hua ^a   Wuu, Dong Sing ^a   Tu, Li Wei ^b   Kao, Hsiang Shun ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED EPILAYERS; AS-GROWN; CHAMBER PRESSURE; DEEP ULTRAVIOLET; GALLIUM OXIDES; HALL MEASUREMENTS; LOW TEMPERATURES; MATERIAL CHARACTERIZATIONS; METAL SEMICONDUCTOR METAL; NITROGEN ENVIRONMENT; OPTIMIZED PARAMETER; OXYGEN FLOW; SINGLE-CRYSTALLINE; SOLAR-BLIND; THERMAL ANNEALING EFFECTS; X-RAY DIFFRACTION SYSTEM;

ANNEALING; EPILAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTONS; SAPPHIRE; TEMPERATURE; VAPORS; X RAY DIFFRACTION;

GALLIUM;

EID: 84872294361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773247     Document Type: Article

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