Growth, structure and carrier transport properties of Ga2O 3 epitaxial film examined for transparent field-effect transistor

Thin Solid Films

Volumn 496, Issue 1, 2006, Pages 37-41

  Matsuzaki, Kosuke ^a   Hiramatsu, Hidenori ^a   Nomura, Kenji ^a   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electrical properties and measurements; Laser ablation; Optoelectronic devices

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; LASER ABLATION; SUBSTRATES; THIN FILMS; YTTRIUM COMPOUNDS;

CARRIER TRANSPORT PROPERTIES; ELECTRICAL PROPERTIES AND MEASUREMENTS;

GALLIUM COMPOUNDS;

EID: 28144454453     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.187     Document Type: Conference Paper

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