Growth of β-Ga 2O 3 on Al 2O 3 and GaAs using metal-organic vapor-phase epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 2, 2009, Pages 243-249

  Gottschalch, Volker ^a   Mergenthaler, Kilian ^a   Wagner, Gerald ^a   Bauer, Jens ^a   Paetzelt, Hendrik ^a   Sturm, Chris ^a   Teschner, Ulrike ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRES; ABSORPTION EDGES; C-PLANE SAPPHIRES; EPITAXIAL RELATIONSHIPS; GAAS; GAAS SUBSTRATES; GROWTH CONDITIONS; IN PLANES; LOW-TEMPERATURE MODIFICATIONS; METAL-ORGANIC VAPOR-PHASE EPITAXIES; MOVPE; OPTICAL TRANSMISSION SPECTRUM; ROTATIONAL DOMAINS; SPECTRAL RANGES; TEM; TRIETHYLGALLIUM; TWO FOLD SYMMETRIES; X-RAY DIFFRACTIONS;

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL LAYERS; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM ALLOYS;

EID: 62549129076     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824436     Document Type: Conference Paper

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