Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5768-5771

  Oshima, Takayoshi ^a   Arai, Naoki ^b   Suzuki, Norihito ^b   Ohira, Shigeo ^b   Fujita, Shizuo ^a  

^a KYOTO UNIVERSITY   (Japan)

^b Nippon Light Metal Company Ltd   (Japan)

Author keywords

Ga2O3; Homoepitaxy; Molecular beam epitaxy; Step flow growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; SURFACE MORPHOLOGY;

HOMOEPITAXY; SINGLE CRYSTAL SUBSTRATES; STEP-FLOW GROWTH; SUBSTRATE POLISHING;

EPITAXIAL FILMS;

EID: 44249089999     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.045     Document Type: Article

References (12)

1. Khan M.A., Shatalov M., Maruska H.P., Wang H.M., and Kuokstis E. Jpn. J. Appl. Phys. 44 (2005) 7191
2. Taniyasu Y., Kasu M., and Makimoto T. Nature 441 (2006) 325
3. Orita M., Ohta H., Hirano M., and Hosono H. Appl. Phys. Lett. 77 (2000) 4166
4. Suzuki N., Ohira S., Tanaka M., Sugawara T., Nakajima K., and Shishido T. Phys. Status Solidi C 4 (2007) 2310
5. Shimamura K., Víllora E.G., Domen K., Yui K., Aoki K., and Ichinose N. Jpn. J. Appl. Phys. 44 (2005) L7
6. Ohira S., Yoshioka M., Sugawara T., Nakajima K., and Shishido T. Thin Solid Films 496 (2006) 53
7. Ohira S., Suzuki N., Minami H., Takahashi K., Araki T., and Nanishi Y. Phys. Status Solidi C 4 (2007) 2306
8. Víllora E.G., Shimamura K., Kitamura K., and Aoki K. Appl. Phys. Lett. 88 (2006) 031105
9. Johnson M.A.L., Fujita S., Rowland W.H., Hughes W.C., Cook J.W., and Schetzina J.F. J. Electron. Mater. 25 (1996) 855
10. Roy R., Hill V.G., and Osborn E.F. J. Am Chem. Soc. 74 (1952) 719
11. Åhman J., Svensson G., and Albertsson J. Acta Crystallogr., Sect. C 52 (1996) 1336
12. Bermudez V.M. Chem. Phys. 323 (2006) 193