Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2310-2313

  Suzuki, N ^a   Ohira, S ^a   Tanaka, M ^b   Sugawara, T ^c   Nakajima, K ^c   Shishido, T ^c  

^a Nippon Light Metal Company Ltd   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDE SEMICONDUCTORS; SN-DOPED;

CRYSTALS; ELECTRIC CONDUCTIVITY; NITRIDES; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS; TIN ALLOYS;

TIN;

EID: 38349091815     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674884     Document Type: Conference Paper

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