Hydrogenated cation vacancies in semiconducting oxides

Journal of Physics Condensed Matter

Volumn 23, Issue 33, 2011, Pages

  Varley, J B ^a   Peelaers, H ^b,c   Janotti, A ^b   Van De Walle, C G ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BENEFICIAL EFFECTS; CATION VACANCIES; ELECTRONIC AND STRUCTURAL PROPERTIES; FAVORABLE CONDITIONS; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; HYDROGEN IMPURITY; INTERSTITIALS; MICROSCOPIC IDENTIFICATION; SCATTERING CENTERS; SEMICONDUCTING OXIDE; TRANSPARENT CONDUCTING OXIDE;

BINDING ENERGY; CALCULATIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN;

POSITIVE IONS;

GALLIUM; GALLIUM OXIDE; HYDROGEN; INDIUM; INDIUM OXIDE; TIN DERIVATIVE; TIN DIOXIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; HYDROGENATION; SEMICONDUCTOR;

GALLIUM; HYDROGEN; HYDROGENATION; INDIUM; MODELS, CHEMICAL; SEMICONDUCTORS; TIN COMPOUNDS;

EID: 80051937833     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/33/334212     Document Type: Article

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