Long channel carbon nanotube as an alternative to nanoscale silicon channels in scaled MOSFETs

Journal of Nanomaterials

Volumn 2013, Issue , 2013, Pages

  Tan, Michael Loong Peng ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; DEVICE PERFORMANCE; DRAIN-INDUCED BARRIER LOWERING; HIGH ELECTRIC FIELDS; LONG-CHANNEL NANOTUBES; MAXIMUM ELECTRIC FIELD; METAL OXIDE SEMICONDUCTOR; SILICON CHANNEL;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBES; ELECTRIC FIELD EFFECTS; MOSFET DEVICES; NANOTECHNOLOGY; SILICON;

SEMICONDUCTING SILICON;

EID: 84892533692     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2013/831252     Document Type: Article

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