Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Tan, Michael Loong Peng ^a,b   Lentaris, Georgios ^b   Amaratunga, Gehan A J ^b  

^a FACULTY OF ELECTRICAL ENGINEERING   (Malaysia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Benchmarking; CNTFET; Device modeling; HSPICE; Logic gates; MOSFET

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL AREA; CNTFET; CURRENT DRIVES; DESIGN RULES; DEVICE MODELING; DRAIN-INDUCED BARRIER LOWERING; ENERGY DELAY PRODUCT; EXPERIMENTAL DATA; HSPICE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFET); MOS-FET; MOSFET MODEL; ON-OFF RATIO; PARASITICS; PERFORMANCE METRICS; POWER-DELAY PRODUCTS; PROPAGATION DELAYS; SEMICONDUCTING CARBON NANOTUBES; SILICON CHANNEL; SUBTHRESHOLD SWING;

BENCHMARKING; CARBON NANOTUBES; CUTOFF FREQUENCY; LOGIC GATES; NANOSENSORS; SPICE;

MOSFET DEVICES;

EID: 84866124583     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-467     Document Type: Article

References (19)

1. Deng J, Wong HSP: A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application-part I: model of the intrinsic channel region. IEEE Trans Electr Dev 2007, 54:3186-3194.
2. Guo J, Datta S, Lundstrom B, McEuen P, Javey A, Dai H, Kim H, McIntyre P: Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors. IEDM Technical Digest 2002, 2002:711-714.
3. Tan MLP, Arora VK, Saad I, Ahmadi MT, Ismail R: The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor. Journal of Applied Physics 2009, 105:7.
4. Rahman A, Guo J, Datta S, Lundstrom MS: Theory of ballistic nanotransistors. IEEE Transactions on Electron Devices 2003, 50:1853-1864.
5. Rahman A, Wang J, Guo J, Hasan MS, Liu Y, Matsudaira A, Ahmed SS, Datta S, Lundstrom M:,: [http://nanohub.org/resources/fettoy].
6. Datta S: Quantum Transport: Atom to Transistor. Cambridge: Cambridge University Press; 2006.
7. Appenzeller J, Knoch J, Radosavljevicacute M, Avouris P: Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. Physical Review Letters 2004, 92:226802.
8. GPDK045-45 nm Generic: (Revision 2.0) [https://pdk.cadence.com/home.do].
9. Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai H: High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters 2005, 5:345-348.
10. Javey A, Guo J, Paulsson M, Wang Q, Mann D, Lundstrom M, Dai H: High-field quasiballistic transport in short carbon nanotubes. Physical Review Letters 2004, 92:106804.
11. Kshirsagar C, El-Zeftawi MN, Banerjee K: Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs. In Proceedings of the DAC: 45th ACM/IEEE Design Automation Conference, 2008: June 8-13 2008; Anaheim. New York: ACM/IEEE 2008, 2008:250-255.
12. Kazmierski TJ, Dafeng Z, Al-Hashimi BM: HSPICE implementation of a numerically efficient model of CNT transistor. In Proceedings of the: FDL 2009 Forum on Specification & Design Languages: Sept 22-24 2009; Sophia Antipolis. Gières: ECSI 2009, 2009:1-5.
13. Rosenblatt S, Yaish Y, Park J, Gore J, Sazonova V, McEuen PL: High performance electrolyte gated carbon nanotube transistors. Nano Letters 2002, 2:869-872.
14. Shimotani H, Kanbara T, Iwasa Y, Tsukagoshi K, Aoyagi Y, Kataura H: Gate capacitance in electrochemical transistor of single-walled carbon nanotube. Appl Phys Lett 2006, 88:073104.
15. Ilani S, Donev LAK, Kindermann M, McEuen PL: Measurement of the quantum capacitance of interacting electrons in carbon nanotubes. Nat Phys 2006, 2:687-691.
16. Fang T, Konar A, Xing H, Jena D: Carrier statistics and quantum capacitance of graphene sheets and ribbons. Appl Phys Lett 2007, 91:092109.
17. Xia J, Chen F, Li J, Tao N: Measurement of the quantum capacitance of graphene. Nat Nano 2009, 4:505-509.
18. Cho G, Kim Y-B, Lombardi F: Assessment of CNTFET based circuit performance and robustness to PVT variations. In Proceedings of the MWSCAS '09 52nd IEEE International Midwest Symposium on Circuits and Systems: August 2-5: Cancun. New York: IEEE 2009, 2009:1106-1109.
19. Riyadi MA, Arora VK: The channel mobility degradation in a nanoscale metal-oxidesemiconductor field effect transistor due to injection from the ballistic contacts. Journal of Applied Physics 2011, 109:056103.