Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

Microelectronics Journal

Volumn 41, Issue 9, 2010, Pages 579-584

  Chek, Desmond C Y ^a   Tan, Michael L P ^a,b   Ahmadi, Mohammad Taghi ^a   Ismail, Razali ^a   Arora, Vijay K ^a,c  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c WILKES UNIVERSITY   (United States)

Author keywords

80 nm CNFET; Analytical device modeling; Carbon nanotube; High mobility; Inverter; Low mobility; SPICE

Indexed keywords

80 NM CNFET; DEVICE MODELING; HIGH MOBILITY; INVERTER; LOW MOBILITY;

ANALYTIC EQUIPMENT; CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; MODELS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SPICE;

CARRIER MOBILITY;

EID: 77957911669     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2010.05.008     Document Type: Article

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