-
1
-
-
0032492884
-
Room-temperature transistor based on a single carbon nanotube
-
Tans S.J., Verschueren A.R.M., and Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature 393 (1998) 49-52
-
(1998)
Nature
, vol.393
, pp. 49-52
-
-
Tans, S.J.1
Verschueren, A.R.M.2
Dekker, C.3
-
2
-
-
0035834444
-
Logic circuits with carbon nanotube transistors
-
Bachtold A., Hadley P., Nakanishi T., and Dekker C. Logic circuits with carbon nanotube transistors. Science 294 (2001) 1317-1320
-
(2001)
Science
, vol.294
, pp. 1317-1320
-
-
Bachtold, A.1
Hadley, P.2
Nakanishi, T.3
Dekker, C.4
-
3
-
-
33646900503
-
Device scaling limits of Si mosfets and their application dependencies
-
Frank D.J., Dennard R., Nowak E., Solomon P., Taur Y., and Wong H.-S.P. Device scaling limits of Si mosfets and their application dependencies. Proc. IEEE 89 (2001) 259-288
-
(2001)
Proc. IEEE
, vol.89
, pp. 259-288
-
-
Frank, D.J.1
Dennard, R.2
Nowak, E.3
Solomon, P.4
Taur, Y.5
Wong, H.-S.P.6
-
4
-
-
17944383013
-
High-field electrical transport in single-wall carbon nanotubes
-
Yao Z., Kane C.L., and Dekker C. High-field electrical transport in single-wall carbon nanotubes. Phys. Rev. Lett. 84 (2000) 2941-2944
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 2941-2944
-
-
Yao, Z.1
Kane, C.L.2
Dekker, C.3
-
5
-
-
1642528399
-
Electron-phonon scattering in metallic single-walled carbon nanotubes
-
Park J.Y., Rosenblatt S., Yaish Y., Sazanova V., Ustunel H., Braig S., Arias T.A., Brouwer P.W., and McEuen P.L. Electron-phonon scattering in metallic single-walled carbon nanotubes. Nano Lett. 4 (2004) 517-520
-
(2004)
Nano Lett.
, vol.4
, pp. 517-520
-
-
Park, J.Y.1
Rosenblatt, S.2
Yaish, Y.3
Sazanova, V.4
Ustunel, H.5
Braig, S.6
Arias, T.A.7
Brouwer, P.W.8
McEuen, P.L.9
-
6
-
-
0005836651
-
Single- and multi-wall carbon nanotube field-effect transistors
-
Martel R., Schmidt T., Shea H.R., Hertel T., and Avouris Ph. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 73 (1998) 2447-2449
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2447-2449
-
-
Martel, R.1
Schmidt, T.2
Shea, H.R.3
Hertel, T.4
Avouris, Ph.5
-
7
-
-
79956022434
-
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
-
Wind S., Appenzeller J., Martel R., Derycke V., and Avouris Ph. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Appl. Phys. Lett. 80 (2002) 3817-3819
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3817-3819
-
-
Wind, S.1
Appenzeller, J.2
Martel, R.3
Derycke, V.4
Avouris, Ph.5
-
8
-
-
0037008487
-
Carbon nanotubes-the route toward applications
-
Baughman R.H., Zakhidov A.A., and de Heer W.A. Carbon nanotubes-the route toward applications. Science 297 (2002) 787-792
-
(2002)
Science
, vol.297
, pp. 787-792
-
-
Baughman, R.H.1
Zakhidov, A.A.2
de Heer, W.A.3
-
9
-
-
33646895440
-
Transistor scaling with novel materials
-
Ieong M., Narayanan V., Singh D., Topol A., Chan V., and Ren Z. Transistor scaling with novel materials. Mater. today 9 (2006) 26-31
-
(2006)
Mater. today
, vol.9
, pp. 26-31
-
-
Ieong, M.1
Narayanan, V.2
Singh, D.3
Topol, A.4
Chan, V.5
Ren, Z.6
-
10
-
-
0030381962
-
Degradation of MOSFETs drive current due to halo ion implantation
-
Hwang H., Lee D.H., and Hwang J.M. Degradation of MOSFETs drive current due to halo ion implantation. Int. Electron Dev. Meet (1996) 567-570
-
(1996)
Int. Electron Dev. Meet
, pp. 567-570
-
-
Hwang, H.1
Lee, D.H.2
Hwang, J.M.3
-
11
-
-
0036498160
-
Analytical and numerical study of the impact of halos on short channel and hot carrier effects in scaled MOSFETS
-
Zanchetta S., Todon A., Abramo A., Selmi L., and Sangiorgi E. Analytical and numerical study of the impact of halos on short channel and hot carrier effects in scaled MOSFETS. Solid-State Electron. 46 (2002) 429-434
-
(2002)
Solid-State Electron.
, vol.46
, pp. 429-434
-
-
Zanchetta, S.1
Todon, A.2
Abramo, A.3
Selmi, L.4
Sangiorgi, E.5
-
12
-
-
55249092973
-
Study of 30-nm Double-Gate MOSFET with halo implantation technology using a two-dimensional device simulator
-
Endoh T., and Momma Y. Study of 30-nm Double-Gate MOSFET with halo implantation technology using a two-dimensional device simulator. IEICE Trans. Electron E90-C (2007) 1000-1005
-
(2007)
IEICE Trans. Electron
, vol.E90-C
, pp. 1000-1005
-
-
Endoh, T.1
Momma, Y.2
-
13
-
-
0031120671
-
Potential design and transport property of 0.1 mm MOSFET with asymmetric channel profile
-
Odanaka S., and Hiroki A. Potential design and transport property of 0.1 mm MOSFET with asymmetric channel profile. IEEE Trans. Electron Devices 44 (1997) 595-600
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 595-600
-
-
Odanaka, S.1
Hiroki, A.2
-
14
-
-
0032313799
-
Sub 0.18 mm SOI MOSFETs using lateral symmetric channel profile and Ge preamorphization salicide technology
-
Cheng B., Ramgopal Rao V., and Woo J.C.S. Sub 0.18 mm SOI MOSFETs using lateral symmetric channel profile and Ge preamorphization salicide technology. Proc. IEEE 18 (1998) 113-114
-
(1998)
Proc. IEEE
, vol.18
, pp. 113-114
-
-
Cheng, B.1
Ramgopal Rao, V.2
Woo, J.C.S.3
-
15
-
-
3943112926
-
Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study
-
Reddy G.V., and Kumar M.J. Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study. Microelectron. J. 35 (2004) 761-765
-
(2004)
Microelectron. J.
, vol.35
, pp. 761-765
-
-
Reddy, G.V.1
Kumar, M.J.2
-
17
-
-
55249096662
-
Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study
-
Arefinia Z., and Orouji A.A. Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study. Physica E 41 (2008) 196-201
-
(2008)
Physica E
, vol.41
, pp. 196-201
-
-
Arefinia, Z.1
Orouji, A.A.2
-
18
-
-
57849114728
-
Novel attributes in scaling issues of carbon nanotube field-effect transistors
-
Arefinia Z., and Orouji A.A. Novel attributes in scaling issues of carbon nanotube field-effect transistors. Microelectron. J. 40 (2009) 5-9
-
(2009)
Microelectron. J.
, vol.40
, pp. 5-9
-
-
Arefinia, Z.1
Orouji, A.A.2
-
19
-
-
50249086884
-
Investigation of the novel attributes of a carbon nanotube FET with High-κ gate dielectrics
-
Arefinia Z., and Orouji A.A. Investigation of the novel attributes of a carbon nanotube FET with High-κ gate dielectrics. Physica E 40 (2008) 3068-3071
-
(2008)
Physica E
, vol.40
, pp. 3068-3071
-
-
Arefinia, Z.1
Orouji, A.A.2
-
20
-
-
21644440311
-
Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors
-
Guo J., Javey A., Dai H., and Lundstrom M. Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors. IEDM Tech. Dig. (2004) 703-706
-
(2004)
IEDM Tech. Dig.
, pp. 703-706
-
-
Guo, J.1
Javey, A.2
Dai, H.3
Lundstrom, M.4
-
21
-
-
0442311241
-
A numerical study of scaling issues for Schottky barrier carbon nanotube transistors
-
Guo J., Datta S., and Lundstrom M. A numerical study of scaling issues for Schottky barrier carbon nanotube transistors. IEEE Trans. Electron Devices 51 (2004) 172-177
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 172-177
-
-
Guo, J.1
Datta, S.2
Lundstrom, M.3
-
23
-
-
0035905567
-
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
-
256805-1-4
-
Martel R., Derycke V., Lavoie C., Appenzeller J., Chan K.K., Tersoff J., and Avouris Ph. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. Phys. Rev. Lett. 87 (2001) 256805-1-4
-
(2001)
Phys. Rev. Lett.
, vol.87
-
-
Martel, R.1
Derycke, V.2
Lavoie, C.3
Appenzeller, J.4
Chan, K.K.5
Tersoff, J.6
Avouris, Ph.7
-
24
-
-
60849123768
-
Performance and design considerations of a novel dual-material gate carbon nanotube field-effect transistors: Nonequilibrium Green's function approach
-
Arefinia Z., and Orouji A.A. Performance and design considerations of a novel dual-material gate carbon nanotube field-effect transistors: Nonequilibrium Green's function approach. Jpn. J. Appl. Phys. 48 (2009) 24501-24507
-
(2009)
Jpn. J. Appl. Phys.
, vol.48
, pp. 24501-24507
-
-
Arefinia, Z.1
Orouji, A.A.2
-
25
-
-
0021401123
-
Structure-enhanced MOSFET degradation due to hot electron injection
-
Hsu F., and Grinolds H. Structure-enhanced MOSFET degradation due to hot electron injection. IEEE Trans. Electron Device Lett. EDL-5 (1984) 71-74
-
(1984)
IEEE Trans. Electron Device Lett.
, vol.EDL-5
, pp. 71-74
-
-
Hsu, F.1
Grinolds, H.2
-
26
-
-
0018457253
-
1 μm MOSFET VLSI technology Part IV: Hot-electron design constraints
-
Ning T.H., Cook P.W., Dennard R.H., Schuster C.M., and Yu H.N. 1 μm MOSFET VLSI technology Part IV: Hot-electron design constraints. IEEE Trans. Electron Devices ED-26 (1979) 346-353
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 346-353
-
-
Ning, T.H.1
Cook, P.W.2
Dennard, R.H.3
Schuster, C.M.4
Yu, H.N.5
|