Modeling and analysis of circuit performance of ballistic CNFET

Proceedings - Design Automation Conference

Volumn , Issue , 2006, Pages 717-722

  Paul, Bipul C ^a,b   Fujita, Shinobu ^b   Okajima, Masaki ^b   Lee, Thomas ^a  

^a Stanford University   (United States)

^b Toshiba America Research Inc   (United States)

Author keywords

Ballistic carbon nanotube FET (CNFET); Circuit compatible model; Circuit performance; Parasitic capacitance

Indexed keywords

CAPACITANCE; CARBON NANOTUBES; CIRCUIT SIMULATION; DIGITAL CIRCUITS; SPICE;

BALLISTIC CARBON NANOTUBE FET (CNFET); CIRCUIT COMPATIBLE MODELS; CIRCUIT PERFORMANCE; PARASITIC CAPACITANCE;

FIELD EFFECT TRANSISTORS;

EID: 34547236228     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1146909.1147092     Document Type: Conference Paper

References (20)

1. P. Avouris, "Supertubes: the unique properties of carbon nanotubes may make them the natural successor to silicon microelectronics," IEEE Spectrum, pp. 40-45, Aug. 2004.
2. J. Guo, S. Datta, and M. Lundstrom, "Assesment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors," IEDM tech. digest, pp. 29.3.1-29.3.4,2002.
3. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube FETs," IEDM tech. digest, pp. 703-706, 2004.
4. G. Pennington, and N. Goldsman, "Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes," Physical Review B, vol. 68, pp. 045426-1-045426-11, 2003.
5. C. Dwyer, M. Cheung, and D J. Sorin, "Semi-empirical SPICE Models for Carbon Nanotube FET Logic," IEEE Nano Letters, vol. 4, pp. 35-39, 2004.
6. A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit compatible model of ballistic carbon nanotube FETs," IEEE Trans, on CAD, vol. 23, pp. 1411-1420, 2004.
7. K. Natori, Y. Kimura, and T. Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," Journal of Applied Physics, vol. 97, pp. 034306-1-034306-7, Jan, 2005.
8. Y. Lin, J. Appenzeller, Z. Chen, Z. G. Chen, H. M. Cheng, and P. Avouris, "High-performance dual-gate carbon nanotube FETs with 40-nm gate length," IEEE Electron Device Lett., vol. 26, n-11, Nov, 2005.
9. K. Alam, and R. Lake, "Performance of 2nm gate length carbon nanotube field-effect transistors with source/drain underlaps," Applied Physics Letters, vol. 87, pp. 073104-1-3, 2005.
10. D. L. John, L. C. Castro, and D. L. Pulfrey, "Quantum capacitance in nanoscale device modeling," Journal of Applied Physics, vol. 96, n-9, pp. 5180-5184, 2004.
11. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P. L. McEuen, "High performance electrolyte gated carbon nanotube transistors," Nano Letters, vol. 2, n-8, pp. 869-872, 2002.
12. P. L. McEuen, M. S. Fuhrer, and H. Park, "Single walled carbon nanotube electronics," IEEE Trans. on Nanotechnology, vol. 1, pp. 78-85, 2002.
13. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistor," Nature, vol. 424, pp. 654-657, 2003.
14. S. J. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbon nanotube field-effect transistors," Physical Review Letters, vol. 91, pp. 058301-1-058301-4, Aug. 2003.
15. J. W. Mintmire, and C. T. White, "Universal density of states for carbon nanotubes," Physical Rev. Lett., vol. 81, pp. 2506-2509, 1998.
16. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, "Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays," Nano Letters, vol. 4, n. 7, pp. 1319-1322, 2004.
17. S. J. Wing, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes," Applied Physics Lett., vol. 80, pp. 3817, 2002.
18. A. Bansal, B. C. Paul, and K. Roy, "Modeling and optimization of fringe capacitance of nanoscale DGMOS devices," IEEE Trans. on Electron Devices, vol. 52, n 2, pp. 256-262, 2005.
19. J. Chen, C. Klinke, A. Afzali, and P. Avouris, "Self-aligned carbon nanotube transistors with charge transfer doping," Applied Physics Letters, vol. 86, pp. 123108-1-3, 2005.
20. Y. Lin, J. Appenzeller, J. Knoch, and P. Avouris, "High-performance carbon nanotube field-effect transistor with tunable polarities," IEEE Trans. on Nanotechnology, vol. 4, n-5, Sept, 2005.