A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1581-1588

  Dawei, Zhang ^a   Hao, Zhang ^a   Zhiping, Yu ^a   Lilin, Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

2D QM effects; Decanano scaled MOSFETs; GCS approach; QM effects in poly gates; Unified analytical charge model

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; GATES (TRANSISTOR); MATHEMATICAL MODELS; POLYSILICON; QUANTUM THEORY; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

2D-QM EFFECTS; DECANANO-SCALED MOSFETS; GATE-CAPACITANCE-SHIFT (GCS) APPROACH; QM EFFECTS IN POLY-GATES; UNIFIED ANALYTICAL CHARGE MODEL;

MOSFET DEVICES;

EID: 27744513170     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.07.026     Document Type: Article

References (15)

1. TSMC 45 nm MOSFET, internal documentation.
2. Yu Z, Dutton RW, Yergeau D, Ancona M. Macroscopic carrier transport modeling. SISPAD '01 Athens, Greece, September 2001. p. 1.
3. D.K. Ferry, R. Akis, and D. Vasileska Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices Digest IEDM 2000 287
4. Yutao Ma, Litian Liu, Lilin Tian, Zhiping Yu, and Zhijian Li Analytical charge control and I-V model for submicron and deep-submicron MOSFETs' fully comprising quantum mechanical effects IEEE Trans Comput Aided Design Integrated Circ Syst 20 4 2001 495
5. Gusmeroli R, Spinelli AS, et al. 2D-QM simulation and optimization of decanano non-overlapped MOS devices. IEDM '03, Washington, DC, 2003.
6. Naoufel Ben Abdallaha On a multidimensional Schrödinger- Poisscattering scattering model for semiconductors J Math Phys 41 7 2000
7. S.E. Laux, A. Kumar, and M.V. Fischetti Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation IEEE Trans Nanotechnol 1 4 2002 255 259
8. Yutao Ma, Litian Liu, Zhiping Yu, and Zhijian Li Effective density-of-states approach to QM correction in MOS structure Solid-State Electron 44 3 2000 401
9. Zhihong Liu, Chenming Hu, Jian Hui Huang, Tung-Yi Chan, Min-Chie Jeng, Ping K. Ko, and Y.C. Cheng Threshold voltage model for deep-submicrometer MOSFETs IEEE Trans Electron Dev 40 1 1993 86
10. Available from: http://www-device.eecs.berkeley.edu/~bsim3/. BSIM 4.
11. Taur Y, Wann CH, Frank DJ. 25 nm CMOS design considerations. IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA; Electron Devices Meeting, 1998. IEDM '98 Technical Digest, International.
12. Yu Z, Yergeau DW, Dutton RW, Svizhenko A, Auatram MP. Quantum transport model for sub-100-nm CMOS devices. Proc SPIE, vol. 4600. Nanjing, China, November 2001. p. 117.
13. Available from: http://www.ise.ch. ISE 8.0 User Manual.
14. Available from: http://www.synopsys.com. Taurus User manual.
15. Zhiping Yu, Dawei Zhang, Lilin Tian. Ballistic MOS model (BMM) considering full 2D quantum effects. Nanotechnology conference and trade show, vol. 2. Boston, March 2004. p. 56-9.