A unified drain-current model of silicon nanowire field-effect transistor (SiNWFET) for performance metric evaluation

Science of Advanced Materials

Volumn 6, Issue 2, 2014, Pages 354-360

  Bahador, Norazlin ^a   Tan, Michael Loong Peng ^a   Ahmadi, M T ^a,b   Ismail, Razali ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b URMIA UNIVERSITY   (Iran)

Author keywords

Circuit; DIBL; GAA; I V Characteristics; Ion Ioff; MOSFET; SiNW; SS

Indexed keywords

EID: 84891818235     PISSN: 19472935     EISSN: 19472943     Source Type: Journal    
DOI: 10.1166/sam.2014.1723     Document Type: Article

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