High-field transport in graphene and carbon nanotubes

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Volumn , Issue , 2013, Pages

  Arora, Vijay K ^a,b   Tan, Michael L P ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b WILKES UNIVERSITY   (United States)

Author keywords

ballistic transport; carbon nanotubes; graphene; high field transport; nonequilibrium statistics

Indexed keywords

APPLIED VOLTAGES; BALLISTIC TRANSPORTS; DRIFT VELOCITIES; HIGH ELECTRIC FIELDS; HIGH FIELD TRANSPORT; NONEQUILIBRIUM STATISTICS; SEMICONDUCTING MATERIALS; VELOCITY VECTORS;

CARBON NANOTUBES; ELECTRIC FIELDS; ELECTRON DEVICES; GREEN'S FUNCTION;

GRAPHENE;

EID: 84890482930     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2013.6628176     Document Type: Conference Paper

References (5)

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2. M. S. Purewal, B. H. Hong, A. Ravi, B. Chandra, J. Hone, and P. Kim, "Scaling of resistance and electron mean free path of single-walled carbon nanotubes," Physical Review Letters, vol. 98, p. 186808, May 4 2007.
3. Z. Yao, C. L. Kane, and C. Dekker, "High-Field Electrical Transport in Single-Wall Carbon Nanotubes," Physical Review Letters, vol. 84, pp. 2941-2944,2000.
4. M. L. P. Tan, T. Saxena, and V. Arora, "Resistance blow-up effect in micro-circuit engineering," Solid-State Electronics, vol. 54, pp. 1617-1624. Dec 2010.
5. V. K. Arora. M. L. P. Tan. and C. Gupta. "High-field transport in a graphene nanolayer." Journal of Applied Physics, vol. 112. p. I 14330. 2012.